Composite integrated semiconductor device

ABSTRACT

A composite integrated semiconductor device. In one embodiment, an input surge/noise absorbing circuit absorbs surge from an input signal, an attenuating/level-shifting circuit attenuates or level-shifts the input signal, and an electrical signal converting circuit converts the input signal to an output signal. The input surge/noise absorbing circuit, the attenuating or level-shifting circuit, and the electrical signal converting circuit together form a unit, and a plurality of these units are arranged in parallel in one semiconductor substrate to form the composite integrated semiconductor device, resulting in a reduction in the number of discrete components mounted on a printed circuit board.

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application is based on, and claims priority to, JP2001-269773 filed Sep. 6, 2001, the contents of which are incorporatedby reference. This application is also related to JP 2002-164890 filedJun. 5, 2002, the contents of which are incorporated by reference.

BACKGROUND OF THE INVENTION

[0002] 1. Field of the Invention

[0003] The present invention relates to a composite integratedsemiconductor device in which there are integrated on the samesemiconductor substrate different circuits such as an input surge/noiseabsorbing circuit for absorbing surge or noise, anattenuating/level-shifting circuit providing attenuation orlevel-shifting operations, and an electrical signal converting circuitproviding an electrical signal converting operation. In particular, thepresent invention relates to a composite integrated semiconductor devicethat inputs a signal without surge and noise to a control unitcontrolling, for example, the electrical equipment of an automobile,with the electric potential level of the signal being matched to theelectric potential level of the control unit.

[0004] 2. Description of the Related Art

[0005] Conventionally, circuits such as a surge/noise absorbing circuitfor absorbing surge or noise, an attenuating/level-shifting circuitproviding an attenuating or a level-shifting operation, an electricalsignal converting circuit providing an electrical signal convertingoperation, etc., are connected to an input side of an electrical controlunit (ECU) that controls the electrical equipment of, for example, anautomobile. These circuits permit the inputting of a signal withoutsurge and noise, with an electric potential level of the signal matchedto an electric potential level of the control unit. FIG. 16 is a blockdiagram schematically showing a conventional configuration of thesefunctional circuits.

[0006] As shown in FIG. 16, a plurality of discrete components 1 such asresistors, capacitors, and diodes are combined, as required, and mountedon a printed circuit board (not shown). External electrical inputsignals 2 are supplied through the discrete components 1 forming thefunctional circuits and output as electrical output signals 3, which aresupplied to the input terminals 5 of a semiconductor device 4 withoutsurges and noise. Each of the signals is matched to a driving electricpotential level of the semiconductor device 4.

[0007] In the conventional configuration as described above, however,realization of the circuits having the desired functions has beenachieved using a large number of the discrete components 1. This hasresulted in an increase in the mounting area of a printed circuit board,and an associated increase in the number of man-hours required to mountthe components.

SUMMARY OF THE INVENTION

[0008] It is an object of the present invention to provide a compositeintegrated semiconductor device in which the number of componentsmounted on a printed circuit board is reduced, decreasing the mountingarea on the printed circuit board and the number of man-hours requiredto mount the components.

[0009] The above object can be attained by a composite integratedsemiconductor device in which circuits such as an input surge/noiseabsorbing circuit, an attenuating/level-shifting circuit, and anelectrical signal converting circuit are integrated in the samesemiconductor substrate.

[0010] According to one aspect of the present invention, a compositeintegrated semiconductor device comprises a plurality of inputtingdevices, such as input terminals, receiving external electrical signals,a plurality of outputting devices, such as output terminals, foroutputting electrical signals, and a plurality of input surge/noiseabsorbing circuits absorbing surges or noise. Each of the inputsurge/noise absorbing circuits is connected between one of the inputtingdevices and a corresponding outputting device. The semiconductorcomponents forming the input surge/noise absorbing circuits areintegrated in the same semiconductor substrate.

[0011] In another aspect of the present invention, a compositeintegrated semiconductor device comprises a plurality of inputtingdevices, such as input terminals, receiving external electrical signals,a plurality of outputting devices, such as output terminals, outputtingelectrical signals, and a plurality of attenuating/level-shiftingcircuits providing an attenuating or a level-shifting operation. Each ofthe attenuating/level-shifting circuits is connected between one of theinputting devices and a corresponding outputting device. Thesemiconductor components forming the attenuating/level-shifting circuitsare integrated in the same semiconductor substrate.

[0012] In a further aspect of the present invention, a compositeintegrated semiconductor device comprises a plurality of inputtingdevices, such as input terminals, receiving external electrical signals,a plurality of outputting devices, such as output terminals, outputtingelectrical signals, and a plurality of electrical signal convertingcircuits providing an electrical signal converting operation. Each ofthe electrical signal converting circuits is connected between one ofthe inputting devices and a corresponding outputting device. Thesemiconductor components forming the electrical signal convertingcircuits are integrated in the same semiconductor substrate.

[0013] In a further aspect of the present invention, a compositeintegrated semiconductor device comprises a plurality of inputtingdevices, such as input terminals, receiving external electrical signals,and a plurality of outputting devices, such as output terminals,outputting electrical signals. Each of a plurality of input surge/noiseabsorbing circuits absorbing surges or noise is connected between one ofthe inputting devices and a corresponding outputting device. A pluralityof attenuating/level-shifting circuits provide an attenuating or alevel-shifting operation. Each of the attenuating/level-shiftingcircuits is connected between one of the inputting devices and acorresponding outputting device. The semiconductor components formingthe input surge/noise absorbing circuits and the semiconductorcomponents forming the attenuating/level-shifting circuits areintegrated in the same semiconductor substrate.

[0014] In a further aspect of the present invention, a compositeintegrated semiconductor device comprises a plurality of inputtingdevices that receive an input electrical signal, a plurality ofoutputting devices that transmit an output electrical signal, aplurality of input surge/noise absorbing circuits that absorb surge ornoise of the input electrical signal, and a plurality of electricalsignal converting circuits that convert the input electrical signal tothe output electrical signal. Each of the input surge/noise absorbingcircuits is connected between respective ones of the inputting devicesand corresponding outputting devices. Also, each of the electricalsignal converting circuits is connected between respective ones of theinputting devices and corresponding outputting devices. A plurality ofsemiconductor components form the input surge/noise absorbing circuitsand the electrical signal converting circuits and are integrated in thesame semiconductor substrate.

[0015] In a further aspect of the present invention, a compositeintegrated semiconductor device comprises a plurality of inputtingdevices that receive an input electrical signal, a plurality ofoutputting devices that transmit an output electrical signal, aplurality of attenuating/level-shifting circuits that attenuate orlevel-shift the input electrical signal, and a plurality of electricalsignal converting circuits that convert the input electrical signal tothe output electrical signal. Each of the attenuating/level-shiftingcircuits is connected between respective ones of the inputting devicesand corresponding outputting devices. Also, each of the electricalsignal converting circuits is connected between respective ones of theinputting devices and corresponding outputting devices. A plurality ofsemiconductor components form the attenuating/level-shifting circuitsand the electrical signal converting circuits and are integrated in thesame semiconductor substrate.

[0016] In a further aspect of the present invention, a compositeintegrated semiconductor device comprises a plurality of inputtingdevices that receive an input electrical signal, a plurality ofoutputting devices that transmit an output electrical signal, aplurality of input surge/noise absorbing circuits that absorb surge ornoise of the input electrical signal, a plurality ofattenuating/level-shifting circuits that attenuate or level-shift theinput electrical signal, and a plurality of electrical signal convertingcircuits that convert the input electrical signal to the outputelectrical signal. Each of the input surge/noise absorbing circuits, theattenuating/level-shifting circuits, and the electrical signalconverting circuits is connected between respective ones of theinputting devices and corresponding outputting devices. A plurality ofsemiconductor components form the input surge/noise absorbing circuits,the attenuating/level-shifting circuits, and the electrical signalconverting circuits, and are integrated in the same semiconductorsubstrate.

[0017] In each of the aspects described above, the input surge/noiseabsorbing circuits are able to withstand an electrostatic surge ofapproximately ±0.5 kV to 15 kV or more at approximately 150 pF and 500Ω,or an electrostatic surge of approximately ±1000V or more atapproximately 100 pF and 1500Ω, or an electromagnetic wave noise ofapproximately 20 to 100 V/m or more at approximately 10 kHz to 200 MHz.Also, the composite integrated semiconductor device according to thepreferred embodiment of the present invention may output the electricalsignals through the outputting devices to a controller controlling theelectrical equipment of an automobile, for example. The position of theoutputting devices may form an angle of about 90° or more with respectto the position of the inputting devices. In addition, the semiconductorsubstrate on which all the semiconductor components are integrated maybe sealed using a resin or ceramic.

[0018] In each of the aspects describe above, the input surge/noiseabsorbing circuits, the attenuating/level-shifting circuits, and theelectrical signal converting circuits are integrated on the samesemiconductor substrate. This reduces the number of components mountedon a printed circuit board compared with a conventional circuitconfiguration in which semiconductor devices having discrete componentsare combined.

[0019] These together with other aspects and advantages that will besubsequently apparent, reside in the details of construction andoperation as more fully hereinafter described and claimed, referencebeing had to the accompanying drawings forming a part hereof, whereinlike numerals refer to like parts throughout.

BRIEF DESCRIPTION OF THE DRAWINGS

[0020]FIG. 1 is a block diagram showing an example of the configurationof a composite integrated semiconductor device according to anembodiment of the present invention.

[0021]FIG. 2 is a block diagram schematically showing an example of aninterface between the composite integrated semiconductor device of FIG.1 and another semiconductor device.

[0022]FIG. 3 is a plan view of a chip showing an example of a chiplayout of the composite integrated semiconductor device of FIG. 1.

[0023]FIG. 4 is a block diagram showing another example of aconfiguration of the composite integrated semiconductor device accordingan embodiment of to the present invention.

[0024]FIG. 5 is a perspective view showing the composite integratedsemiconductor device according to an embodiment of the present inventionas applied to a control unit for the electrical equipment of anautomobile.

[0025]FIG. 6 is a plan view showing a Small Outline Package (SOP) forsealing the composite integrated semiconductor device according to anembodiment of the present invention.

[0026]FIG. 7 is a perspective view showing a Dual Inline Package (DIP)for sealing the composite integrated semiconductor device according toan embodiment of the present invention.

[0027]FIG. 8 is a plan view showing a Quad Flat Package (QFP) forsealing the composite integrated semiconductor device according to anembodiment of the present invention.

[0028]FIG. 9 is a plan view showing a Ball Grid Array (BGA) package or aChip Size Package (CSP) for sealing the composite integratedsemiconductor device according to an embodiment of the presentinvention.

[0029]FIG. 10 is a circuit diagram showing an example of theconfiguration of one of a plurality of units of the composite integratedsemiconductor device according to an embodiment of the presentinvention.

[0030]FIG. 11 is a circuit diagram showing another example of theconfiguration of a unit of the composite integrated semiconductor deviceaccording to an embodiment of the present invention.

[0031]FIG. 12 is a circuit diagram showing another example of theconfiguration of a unit of the composite integrated semiconductor deviceaccording to an embodiment of the present invention.

[0032]FIG. 13 is a circuit diagram showing another example of theconfiguration of a unit of the composite integrated semiconductor deviceaccording to an embodiment of the present invention.

[0033]FIG. 14 is a circuit diagram showing another example of theconfiguration of a unit of the composite integrated semiconductor deviceaccording to an embodiment of the present invention.

[0034]FIG. 15 is a block diagram showing a configuration of a circuitblock shown in FIG. 10 and FIG. 13.

[0035]FIG. 16 is a block diagram schematically showing an interfacebetween a functional circuit comprising a plurality of conventionaldiscrete semiconductor components and a semiconductor device.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0036]FIG. 1 is a block diagram showing an example configuration of thecomposite integrated semiconductor device 15 according to an embodimentof the present invention. FIG. 2 is a block diagram schematicallyshowing an example of an interface between the composite integratedsemiconductor device 15 of FIG. 1 and another semiconductor device 4. Asshown in FIG. 1 and FIG. 2, the composite integrated semiconductordevice 15 is comprised of a plurality of integrated circuits 7. Theintegrated circuits 7 are connected in parallel between referenceelectric potentials formed in the same semiconductor substrate, andsealed in a semiconductor package 6.

[0037] Each integrated circuit 7 has a unit structure with aconfiguration including an input surge/noise absorbing circuit 8absorbing surge or noise, an attenuating/level-shifting circuit 9providing an attenuating or a level-shifting operation, and anelectrical signal converting circuit 10 providing an electrical signalconverting operation. A reference electric potential of the inputsurge/noise absorbing circuit 8 differs from a reference electricpotential of the electrical signal converting circuit 10. Thus, theinput surge/noise absorbing circuit 8 and the electrical signalconverting circuit 10 are connected via the attenuating/level-shiftingcircuit 9.

[0038] Referring to FIG. 1 and FIG. 2, each input terminal 16 (i.e.,inputting device) is projected from the semiconductor package 6. Eachoutput terminal 17 (i.e., outputting device) is projected from anotherside of the semiconductor package 6. The input surge/noise absorbingcircuit 8 of each unit 7 absorbs electrostatic surge or electromagneticwave noise applied between an input terminal 16 and a grounding line 13,or between the grounding line 13 and a first power source line 11.

[0039] As shown in FIG. 2, an external electrical input signal 2transmitted to each of the input terminals 16 of the compositeintegrated semiconductor device 15, to the input surge/noise absorbingcircuit 8, and then to an input line 18 of theattenuating/level-shifting circuit 9. The attenuating/level-shiftingcircuit 9 carries out attenuation or level-shifting of a transient andDC voltage component of the electrical input signal 2. An electricalsignal output from the attenuating level-shifting circuit 9 istransmitted to an input line 19 of the electrical signal convertingcircuit 10.

[0040] The electrical signal converting circuit 10 converts theelectrical signal from the attenuating/level-shifting circuit 9 to anelectrical output signal 3 for which an applied voltage of a secondpower source line 12 to a grounding line 14 is a reference voltage. Theelectrical output signals 3 from each of the units 7 are output throughthe output terminals 17 of the composite integrated semiconductor device15 and transmitted to the input terminals 5 of a semiconductor device 4,such as a microcomputer or a large-scale integrated (LSI) circuit.

[0041]FIG. 3 is a plan view of a chip showing an example of a chiplayout of the composite integrated semiconductor device according to anembodiment of the invention. In the example of the semiconductor chipforming the composite integrated semiconductor device 15 of FIG. 3, aninput surge/noise absorbing circuit 8, an attenuating/level-shiftingcircuit 9, and an electrical signal converting circuit 10 are aligned inthe lateral direction of the chip (i.e., left-to-right direction in FIG.3) to form an integrated circuit. The integrated circuits that areformed are aligned in the longitudinal direction of the chip (i.e.,top-to-bottom direction in FIG. 3).

[0042] The chip layout of FIG. 3 shows two regions 20 and 22 alignedlaterally at the bottom of FIG. 3. Region 20 is a ground for the inputsurge/noise absorbing circuits 8, and region 22 is a ground for theelectrical signal converting circuits 10. Two regions 20 and 22 areformed because of a difference in respective reference electricpotentials.

[0043] As shown in FIG. 4, each integrated circuit 7, which is a unitstructure of the composite integrated semiconductor device 15, may beformed with only, for example, the input surge/noise absorbing circuit8. Similarly, although not shown, each integrated circuit 7 may beformed with only the attenuating/level-shifting circuit 9, or only withthe electrical signal converting circuit 10. Furthermore, eachintegrated circuit 7 may be formed with any two of the input surge/noiseabsorbing circuit 8, the attenuating/level-shifting circuit 9, and theelectrical signal converting circuit 10.

[0044]FIG. 5 shows an example of applying the composite integratedsemiconductor device according to an embodiment of the present inventionto the electrical control unit (EDU) that controls the electricalequipment of an automobile, such as the engine, the automatictransmission, the anti-lock braking system, etc. In FIG. 5, the controlunit 24 is drawn as being transparent so that the inner structure can beseen. In the control unit 24, the composite integrated semiconductordevice 15 and a semiconductor device 4, which is a control device suchas a microcomputer, are mounted on a printed circuit board 25. Aconnector 26 for the control unit 24 is also mounted on the printedcircuit board 25.

[0045] Electrical input signals 2 are input from outside the controlunit 24 to the connector 26. The semiconductor device 4 uses theelectrical input signals 2 to gather information, to determine equipmentstatus, etc. for the automobile. Therefore, the composite integratedsemiconductor device 15 is positioned between the connector 26 and thesemiconductor device 4. When a plurality of input signals 2 withelectric potentials differing from one another are input to thecomposite integrated semiconductor device 15, resistors (not shown) areconnected to the input terminals 16 of the composite integratedsemiconductor device 15, with each of the input terminals 16 beingmatched to each of the input signals 2.

[0046] The connector 26 receives an electrostatic discharge pulse andelectromagnetic interference noise. However, the composite integratedsemiconductor device 15 removes the electrostatic discharge pulse andthe electromagnetic interference noise. Then, electrical signals withoutthe electrostatic discharge pulse and the electromagnetic interferencenoise are converted in the composite integrated semiconductor device 15to signals (i.e., electrical output signals 3) having an adequateelectric potential level for transmission to the input terminals of thesemiconductor device 4. By using the composite integrated semiconductordevice 15, as compared with the conventional configuration of FIG. 16,in which equivalent functions are provided using a plurality of discretecomponents, the mounting area of the semiconductor components 1occupying the printed circuit board 25 is decreased, together with areduction in the cost of mounting the semiconductor components.

[0047] When the composite integrated semiconductor device 15 accordingto an embodiment of the present invention is applied to the electricalequipment of an automobile, the composite integrated semiconductordevice 15 is able to withstand electrostatic discharge pulses ofapproximately ±0.5 kV to 15 kV or more at approximately 150 pF and 500Ωin accordance with D001-94 of the Japan Automobile Standard Organization(JASO), or to withstand electrostatic discharge pulses of approximately±1000V or more at 100 pF and approximately 1500Ω in accordance withstandard ED-4701-1 of the Electronic Industries Association of Japan(EIAJ). Moreover, the composite integrated semiconductor device 15 isable to withstand electromagnetic interferences of approximately 20 to100 V/m or more at approximately 10 kHz to 200 MHz.

[0048] Next, details are provided regarding the semiconductor package 6.FIG. 6 is a plan view showing an example of sealing the compositeintegrated semiconductor device 15 of an embodiment of the presentinvention in a Small Outline Package (SOP) 31. As shown in FIG. 6, aplurality of output terminals 34 are positioned about 180° from aplurality of input terminals 33, thereby preventing surge and noiseapplied to the input terminals 33 from being transmitted to the outputterminals 34. In FIG. 6, arrows with reference numerals 32 and 35represent the electrical input signals and the electrical outputsignals, respectively.

[0049]FIG. 7 is a perspective view showing an example of sealing thecomposite integrated semiconductor device 15 in a Dual In-Line Package(DIP) 36. As shown in FIG. 7, a plurality of output terminals 39 arepositioned about 180° from a plurality of input terminals 38, therebypreventing surge and noise applied to the input terminals 38 from beingtransmitted to the output terminals 39. In FIG. 7, arrows with referencenumerals 37 and 40 represent the electrical input signals and theelectrical output signals, respectively.

[0050]FIG. 8 is a plan view showing an example of sealing the compositeintegrated semiconductor device 15 in a Quad Flat Package (QFP) 41. Asshown in FIG. 8, a plurality of output terminals 44 are separated from aplurality of input terminals 43 in one or more different directions (twodirections in the example shown in FIG. 8) by an angle of about 90° ormore. In FIG. 8, arrows with reference numerals 42 and 45 represent theelectrical input signals and the electrical output signals,respectively. Alternatively, one set of input or output terminals mayprotrude from a side of the semiconductor package 6 and the other set ofterminals may protrude from the bottom of the semiconductor package 6.

[0051]FIG. 9 is a plan view showing an example of sealing the compositeintegrated semiconductor device 15 in a Ball Grid Array (BGA) package 46or a Chip Size Package (CSP) 46. As shown in FIG. 9, a plurality ofoutput terminals 49 are disposed on a side different from a sideprovided with a plurality of input terminals 48 by an angle ofapproximately 90° or more. In the example shown in FIG. 9, the outputterminals 49 and the input terminals 48 are located on opposite sides ofthe composite integrated semiconductor device 15. In FIG. 9, referencenumeral 47 denotes the electrical input signals and reference numeral 50denotes the electrical output signals.

[0052] In the various examples of semiconductor packages 6 as describedabove, a plurality of the input terminals are collected together on oneside of the semiconductor package 6 and a plurality of the outputterminals are collected together on the other side. Any power sourceterminals and grounding terminals are located at the remaining sides. Inaddition, the semiconductor substrate on which all the semiconductorcomponents are integrated may be sealed using a resin or ceramic.

[0053]FIG. 10 through FIG. 14 are circuit diagrams showing specificcircuit configurations for the input surge/noise absorbing circuit 8,the attenuating/level-shifting circuit 9, and the electrical signalconverting circuit 10. Each of FIGS. 10 through 14 shows one of theintegrated circuits 7, which is a unit structure of the compositeintegrated semiconductor device 15. The electrical signal convertingcircuit 10 is not shown in FIGS. 11 and 12.

[0054] The example shown in FIG. 10 has ten diodes 51 to 60, sixresistors 61 to 66, and a circuit block 10, which is the electricalsignal converting circuit 10 (described below). The example shown inFIG. 11 has eight diodes 71 to 78 and five resistors 79 to 83. Theexample shown in FIG. 12 has eleven diodes 91 to 101, five resistors 102to 106, and an operational amplifier 107. The example shown in FIG. 13has nine diodes 111 to 119, six resistors 120 to 125, and an electricalsignal converting circuit 10 (circuit block). The example shown in FIG.14 has three diodes 131 to 133, two resistors 134 and 135, seven MOSFETs136 to 142, and a capacitor 143. The circuit blocks 10 of FIGS. 10 and13 are formed using conventional techniques and may include circuitssuch as an operational amplifier (OP amp) 151, a buffer 152, an inverter153, a logic gate 154, a filter 155, and a ROM 156, as shown in FIG. 15.

[0055] The components of the circuits shown in FIGS. 10-14 are formedusing conventional techniques. For example, the diodes 51 to 60, 71 to78, 91 to 101,111 to 119, and 131 to 133 may be formed, for example,using PN junction structures having a p-type diffused region and ann-type diffused region, or by MOSFETs having a main terminal and a gatethat are short-circuited. The resistors 61 to 66, 79 to 83, 102 to 106,120 to 125, 134, and 135 may be formed of, for example, diffusedresistors having a diffused region formed in a semiconductor substrate,resistors formed of polysilicon, or well resistors having a well formedin a semiconductor substrate.

[0056] Furthermore, the capacitor 143 of FIG. 14 may be formed by, forexample, a well with polysilicon layered thereon through an insulationlayer. In addition, the OP amp 151, the buffer 152, the inverter 153,the logic gate 154, the filter 155, and the ROM 156 may be formed byMOSFETs, as well as by the above-described resistors and capacitors.Voltages at various parts of the circuits in FIGS. 10-13 are provided asapproximately 24V at IN, 18V at Vcc1, 7V at Vcc2, and 4.0 to 5.3V atOUT.

[0057] According to the various aspects of the present invention asdescribed above, the input surge/noise absorbing circuit 8, theattenuating/level-shifting circuit 9, and the electrical signalconverting circuit 10 are integrated in the same semiconductorsubstrate. Thus, the number of components mounted on a printed circuitboard is reduced compared with a conventional circuit configuration inwhich semiconductor devices are formed by combining a plurality ofdiscrete components. As a result, the mounting area on the printedcircuit board and the number of man-hours required to mount thecomponents are reduced.

[0058] The present invention is not limited to the above describedaspects, but may be modified, provided the circuits at stages precedinga microcomputer, such as the circuit for absorbing noise and surge andthe circuit for making electric signal levels match those of themicrocomputer, are integrated in the same semiconductor substrate.

[0059] The many features and advantages of the invention are apparentfrom the detailed specification and, thus, it is intended by theappended claims to cover all such features and advantages of theinvention that fall within the true spirit and scope of the invention.Further, since numerous modifications and changes will readily occur tothose skilled in the art, it is not desired to limit the invention tothe exact construction and operation illustrated and described, andaccordingly all suitable modifications and equivalents may be resortedto, falling within the scope of the invention.

What is claimed is:
 1. A composite integrated semiconductor device,comprising: inputting means for inputting an input electrical signal;outputting means for outputting an output electrical signal; inputsurge/noise absorbing means for absorbing surge or noise of the inputelectrical signal, and being connected between the inputting means andthe outputting means; and a plurality of semiconductor componentsforming the input surge/noise absorbing means and being integrated in asemiconductor substrate.
 2. The composite integrated semiconductordevice as claimed in claim 1, wherein the input surge/noise absorbingmeans is able to withstand an electrostatic discharge capability ofapproximately ±0.5 kV to 15 kV at approximately 150 pF and 500Ω.
 3. Thecomposite integrated semiconductor device as claimed in claim 1, whereinthe input surge/noise absorbing means is able to withstand anelectrostatic discharge capability of approximately ±1000V atapproximately 100 pF and 1500Ω.
 4. The composite integratedsemiconductor device as claimed in claim 1, wherein the inputsurge/noise absorbing means is able to withstand an electromagneticcompatibility capability of approximately 20 to 100 V/m at approximately10 kHz to 200 MHz.
 5. The composite integrated semiconductor device asclaimed in claim 1, wherein the outputting means is positioned at anangle of about 90° or more with respect to a position of the inputtingmeans.
 6. A composite integrated semiconductor device, comprising:inputting means for inputting an input electrical signal; outputtingmeans for outputting an output electrical signal;attenuating/level-shifting means for attenuating or level-shifting theinput electrical signal, and being connected between the inputting meansand the outputting means; and a plurality of semiconductor componentsforming the attenuating/level-shifting means and being integrated in asemiconductor substrate.
 7. The composite integrated semiconductordevice as claimed in claim 6, wherein the outputting means is positionedat an angle of about 90° or more with respect to a position of theinputting means.
 8. A composite integrated semiconductor device,comprising: inputting means for inputting an input electrical signal;outputting means for outputting an output electrical signal; electricalsignal converting means for converting the input electrical signal tothe output electrical signal, and being connected between the inputtingmeans and the outputting means; and a plurality of semiconductorcomponents forming the electrical signal converting means and beingintegrated in a semiconductor substrate.
 9. The composite integratedsemiconductor device as claimed in claim 8, wherein the outputting meansis positioned at an angle of about 90° or more with respect to aposition of the inputting means.
 10. A composite integratedsemiconductor device, comprising: inputting means for inputting an inputelectrical signal; outputting means for outputting an output electricalsignal; input surge/noise absorbing means for absorbing surge or noiseof the input electrical signal, and being connected between theinputting means and the outputting means; attenuating/level-shiftingmeans for attenuating or level-shifting the input electrical signal, andbeing connected between the inputting means and the outputting means;and a plurality of semiconductor components forming the inputsurge/noise absorbing means and the attenuating/level-shifting means,and being integrated in a semiconductor substrate.
 11. The compositeintegrated semiconductor device as claimed in claim 10, wherein theinput surge/noise absorbing means is able to withstand an electrostaticdischarge capability of approximately ±0.5 kV to 15 kV at approximately150 pF and 500Ω.
 12. The composite integrated semiconductor device asclaimed in claim 10, wherein the input surge/noise absorbing means isable to withstand an electrostatic discharge capability of approximately±1000V at approximately 100 pF and 1500Ω.
 13. The composite integratedsemiconductor device as claimed in claim 10, wherein the inputsurge/noise absorbing means is able to withstand an electromagneticcompatibility capability of approximately 20 to 100 V/m at approximately10 kHz to 200 MHz.
 14. The composite integrated semiconductor device asclaimed in claim 10, wherein the outputting means is positioned at anangle of about 90° or more with respect to a position of the inputtingmeans.
 15. A composite integrated semiconductor device, comprising:inputting means for inputting an input electrical signal; outputtingmeans for outputting an output electrical signal; input surge/noiseabsorbing means for absorbing surge or noise of the input electricalsignal, and being connected between the inputting means and theoutputting means; electrical signal converting means for converting theinput electrical signal to the output electrical signal, and beingconnected between the inputting means and the outputting means; and aplurality of semiconductor components forming the input surge/noiseabsorbing means and the electrical signal converting means, and beingintegrated in a semiconductor substrate.
 16. The composite integratedsemiconductor device as claimed in claim 15, wherein the inputsurge/noise absorbing means is able to withstand an electrostaticdischarge capability of approximately ±0.5 kV to 15 kV at approximately150 pF and 500Ω.
 17. The composite integrated semiconductor device asclaimed in claim 15, wherein the input surge/noise absorbing means isable to withstand an electrostatic discharge capability of approximately±1000V at approximately 100 pF and 1500Ω.
 18. The composite integratedsemiconductor device as claimed in claim 15, wherein the inputsurge/noise absorbing means is able to withstand an electromagneticcompatibility capability of approximately 20 to 100 V/m at approximately10 kHz to 200 MHz.
 19. The composite integrated semiconductor device asclaimed in claim 15, wherein the outputting means is positioned at anangle of about 90° or more with respect to a position of the inputtingmeans.
 20. A composite integrated semiconductor device, comprising:inputting means for inputting an input electrical signal; outputtingmeans for outputting an output electrical signal;attenuating/level-shifting means for attenuating or level-shifting theinput electrical signal, and being connected between the inputting meansand the outputting means; electrical signal converting means forconverting the input electrical signal to the output electrical signal,and being connected between the inputting means and the outputtingmeans; and a plurality of semiconductor components forming theattenuating/level-shifting means and the electrical signal convertingmeans, and being integrated in a semiconductor substrate.
 21. Thecomposite integrated semiconductor device as claimed in claim 20,wherein the outputting means is positioned at an angle of about 90° ormore with respect to a position of the inputting means.
 22. A compositeintegrated semiconductor device, comprising: inputting means forinputting an input electrical signal; outputting means for outputting anoutput electrical signal; input surge/noise absorbing means forabsorbing surge or noise of the input electrical signal, and beingconnected between the inputting means and the outputting means;attenuating/level-shifting means for attenuating or level-shifting theinput electrical signal, and being connected between the inputting meansand the outputting means; electrical signal converting means forconverting the input electrical signal to the output electrical signal,and being connected between the inputting means and the outputtingmeans; and a plurality of semiconductor components forming the inputsurge/noise absorbing means, the attenuating/level-shifting means, andthe electrical signal converting means, and being integrated in asemiconductor substrate.
 23. The composite integrated semiconductordevice as claimed in claim 22, wherein the input surge/noise absorbingmeans is able to withstand an electrostatic discharge capability ofapproximately ±0.5 kV to 15 kV at approximately 150 pF and 500Ω.
 24. Thecomposite integrated semiconductor device as claimed in claim 22,wherein the input surge/noise absorbing means is able to withstand anelectrostatic discharge capability of approximately ±1000V atapproximately 100 pF and 1500Ω.
 25. The composite integratedsemiconductor device as claimed in claim 22, wherein the inputsurge/noise absorbing means is able to withstand an electromagneticcompatibility capability of approximately 20 to 100 V/m at approximately10 kHz to 200 MHz.
 26. The composite integrated semiconductor device asclaimed in claim 22, wherein the outputting means is positioned at anangle of about 90° or more with respect to a position of the inputtingmeans.
 27. A composite integrated semiconductor device, comprising: aplurality of inputting devices receiving an input electrical signal; aplurality of outputting devices transmitting an output electricalsignal; a plurality of input surge/noise absorbing circuits to absorbsurge or noise of the input electrical signal, each of the surge/noiseabsorbing circuits being connected between respective ones of theinputting devices and corresponding outputting devices; and a pluralityof semiconductor components forming the input surge/noise absorbingcircuit, and being integrated in a semiconductor substrate.
 28. Thecomposite integrated semiconductor device as claimed in claim 27,wherein the input surge/noise absorbing means is able to withstand anelectrostatic discharge capability of approximately ±0.5 kV to 15 kV atapproximately 150 pF and 500Ω.
 29. The composite integratedsemiconductor device as claimed in claim 27, wherein the inputsurge/noise absorbing means is able to withstand an electrostaticdischarge capability of approximately ±1000V at approximately 100 pF and1500Ω.
 30. The composite integrated semiconductor device as claimed inclaim 27, wherein the input surge/noise absorbing means is able towithstand an electromagnetic compatibility capability of approximately20 to 100 V/m at approximately 10 kHz to 200 MHz.
 31. The compositeintegrated semiconductor device as claimed in claim 27, wherein theoutputting devices are positioned at an angle of about 90° or more withrespect to a position of the inputting devices.
 32. A compositeintegrated semiconductor device, comprising: a plurality of inputtingdevices receiving an input electrical signal; a plurality of outputtingdevices transmitting an output electrical signal; a plurality ofattenuating/level-shifting circuits to attenuate or level-shift theinput electrical signal, each of the attenuating/level-shifting circuitsbeing connected between respective ones of the inputting devices andcorresponding outputting devices; and a plurality of semiconductorcomponents forming the attenuating/level-shifting circuits and beingintegrated in a semiconductor substrate.
 33. The composite integratedsemiconductor device as claimed in claim 32, wherein the outputtingdevices are positioned at an angle of about 90° or more with respect toa position of the inputting devices.
 34. A composite integratedsemiconductor device, comprising: a plurality of inputting devicesreceiving an input electrical signal; a plurality of outputting devicestransmitting an output electrical signal; a plurality of electricalsignal converting circuits to convert the input electrical signal to theoutput electrical signal, each of the electrical signal convertingcircuits being connected between respective ones of the inputtingdevices and corresponding outputting devices; and a plurality ofsemiconductor components forming the electrical signal convertingcircuits and being integrated in a semiconductor substrate.
 35. Thecomposite integrated semiconductor device as claimed in claim 34,wherein the outputting devices are positioned at an angle of about 90°or more with respect to a position of the inputting devices.
 36. Acomposite integrated semiconductor device, comprising: a plurality ofinputting devices receiving an input electrical signal; a plurality ofoutputting devices transmitting an output electrical signal; a pluralityof input surge/noise absorbing circuits to absorb surge or noise of theinput electrical signal, each of the input surge/noise absorbingcircuits being connected between respective ones of the inputtingdevices and corresponding outputting devices; a plurality ofattenuating/level-shifting circuits to attenuate or level-shift theinput electrical signal, each of the attenuating/level-shifting circuitsbeing connected between respective ones of the inputting devices andcorresponding outputting devices; and a plurality of semiconductorcomponents forming the input surge/noise absorbing circuits and theattenuating/level-shifting circuits, and being integrated in asemiconductor substrate.
 37. The composite integrated semiconductordevice as claimed in claim 36, wherein the input surge/noise absorbingmeans is able to withstand an electrostatic discharge capability ofapproximately ±0.5 kV to 15 kV at approximately 150 pF and 500Ω.
 38. Thecomposite integrated semiconductor device as claimed in claim 36,wherein the input surge/noise absorbing means is able to withstand anelectrostatic discharge capability of approximately ±1000V atapproximately 100 pF and 1500Ω.
 39. The composite integratedsemiconductor device as claimed in claim 36, wherein the inputsurge/noise absorbing means is able to withstand an electromagneticcompatibility capability of approximately 20 to 100 V/m at approximately10 kHz to 200 MHz.
 40. The composite integrated semiconductor device asclaimed in claim 36, wherein the outputting devices are positioned at anangle of about 90° or more with respect to a position of the inputtingdevices.
 41. A composite integrated semiconductor device, comprising: aplurality of inputting devices receiving an input electrical signal; aplurality of outputting devices transmitting an output electricalsignal; a plurality of input surge/noise absorbing circuits to absorbsurge or noise of the input electrical signal, each of the inputsurge/noise absorbing circuits being connected between respective onesof the inputting devices and corresponding outputting devices; aplurality of electrical signal converting circuits to convert the inputelectrical signal to the output electrical signal, each of theelectrical signal converting circuits being connected between respectiveones of the inputting devices and corresponding outputting devices; anda plurality of semiconductor components forming the input surge/noiseabsorbing circuits and the electrical signal converting circuits, andbeing integrated in a semiconductor substrate.
 42. The compositeintegrated semiconductor device as claimed in claim 41, wherein theinput surge/noise absorbing means is able to withstand an electrostaticdischarge capability of approximately ±0.5 kV to 15 kV at approximately150 pF and 500Ω.
 43. The composite integrated semiconductor device asclaimed in claim 41, wherein the input surge/noise absorbing means isable to withstand an electrostatic discharge capability of approximately±1000V at approximately 100 pF and 1500Ω.
 44. The composite integratedsemiconductor device as claimed in claim 41, wherein the inputsurge/noise absorbing means is able to withstand an electromagneticcompatibility capability of approximately 20 to 100 V/m at approximately10 kHz to 200 MHz.
 45. The composite integrated semiconductor device asclaimed in claim 41, wherein the outputting devices are positioned at anangle of about 90° or more with respect to a position of the inputtingdevices.
 46. A composite integrated semiconductor device, comprising: aplurality of inputting devices receiving an input electrical signal; aplurality of outputting devices transmitting an output electricalsignal; a plurality of attenuating/level-shifting circuits to attenuateor level-shift the input electrical signal, each of theattenuating/level-shifting circuits being connected between respectiveones of the inputting devices and corresponding outputting devices; aplurality of electrical signal converting circuits to convert the inputelectrical signal to the output electrical signal, each of theelectrical signal converting circuits being connected between respectiveones of the inputting devices and corresponding outputting devices; anda plurality of semiconductor components forming theattenuating/level-shifting circuits and the electrical signal convertingcircuits, and being integrated in a semiconductor substrate.
 47. Thecomposite integrated semiconductor device as claimed in claim 46,wherein the outputting devices are positioned at an angle of about 90°or more with respect to a position of the inputting devices.
 48. Acomposite integrated semiconductor device, comprising: a plurality ofinputting devices receiving an input electrical signal; a plurality ofoutputting devices transmitting an output electrical signal; a pluralityof input surge/noise absorbing circuits to absorb surge or noise of theinput electrical signal, each of the input surge/noise absorbingcircuits being connected between respective ones of the inputtingdevices and corresponding outputting devices; a plurality ofattenuating/level-shifting circuits to attenuate or level-shift theinput electrical signal, each of the attenuating/level-shifting circuitsbeing connected between respective ones of the inputting devices andcorresponding outputting devices; a plurality of electrical signalconverting circuits to convert the input electrical signal to the outputelectrical signal, each of the electrical signal converting circuitsbeing connected between respective ones of the inputting devices andcorresponding outputting devices; and a plurality of semiconductorcomponents forming the input surge/noise absorbing circuits, theattenuating/level-shifting circuits, and the electrical signalconverting circuits, and being integrated in a semiconductor substrate.49. The composite integrated semiconductor device as claimed in claim48, wherein the input surge/noise absorbing means is able to withstandan electrostatic discharge capability of approximately ±0.5 kV to 15 kVat approximately 150 pF and 500Ω.
 50. The composite integratedsemiconductor device as claimed in claim 48, wherein the inputsurge/noise absorbing means is able to withstand an electrostaticdischarge capability of approximately ±1000V at approximately 100 pF and1500Ω.
 51. The composite integrated semiconductor device as claimed inclaim 48, wherein the input surge/noise absorbing means is able towithstand an electromagnetic compatibility capability of approximately20 to 100 V/m at approximately 10 kHz to 200 MHz.
 52. The compositeintegrated semiconductor device as claimed in claim 48, wherein theoutputting devices are positioned at an angle of about 90° or more withrespect to a position of the inputting devices.